AOD3C60 600v,3a n-channel mosfet general description product summary v ds @ t j,max 700 i dm 19a r ds(on),max < 1.4 w q g,typ 10.3nc e oss @ 400v 2 m c 100% uis tested! 100% r g tested! symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt t j , t stg t l symbol r q ja r q cs r q jc maximum case-to-sink a maximum junction-to-case d,f c/w c/w 1.1 0.5 1.4 derate above 25 o c 89 0.7 6 single pulsed avalanche energy h 218 p d dv/dt 100 600 avalanche current c 18 repetitive avalanche energy c pulsed drain current c continuous drain current b the AOD3C60 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac- dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage v 30 gate-source voltage t c =100c a i d t c =25c 3 2.5 19 typical w w/ o c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 c junction and storage temperature range -50 to 150 c power dissipation b maximum junction-to-ambient a,g t c =25c - 55 maximum thermal characteristics units c/w 45 parameter v/ns 20 mj a mj g ds g s d g s d top view to252dpak bottom view AOD3C60 rev.1.0 april 2013 www.aosmd.com page 1 of 6
AOD3C60 symbol min typ max units 600 700 bv dss / ? tj 0.59 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3 4 5 v r ds(on) 1.15 1.4 w g fs 2.8 s v sd 0.76 1 v i s maximum body-diode continuous current 3 a i sm 19 a c iss 648 pf c oss 29 pf c o(er) 24 pf c o(tr) 40 pf c rss 1.5 pf r g 5.9 w q g 10.3 15 nc q gs 4.3 nc q gd 1.8 nc t d(on) 22 ns t r 18 ns t d(off) 32 ns t f 19 ns t rr 238 ns q rr 2.5 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =3a,di/dt=100a/ m s,v ds =100v switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =300v, i d =3a, r g =25 w turn-off fall time bv dss static drain-source on-resistance v gs =10v, i d =1a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v zero gate voltage drain current id=250 a, vgs=0v v ds =0v, v gs =30v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c total gate charge v gs =10v, v ds =480v, i d =3a gate source charge m a gate drain charge v ds =5v, i d =250 m a v ds =480v, t j =125c i s =1a,v gs =0v v ds =40v, i d =1.5a forward transconductance dynamic parameters diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =0 to 480v, f=1mhz effective output capacitance, time related j v gs =0v, v ds =100v, f=1mhz i dss zero gate voltage drain current v ds =600v, v gs =0v body diode reverse recovery charge i f =3a,di/dt=100a/ m s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime body diode reverse recovery time v gs =0v, v ds =100v, f=1mhz effective output capacitance, energy related i a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c in a to252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additio nal heatsinking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25c. h. l=60mh, i as =2.7a, v dd =150v, r g =10 ? , starting t j =25c i. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. j. c o(tr) is a fixed capacitance that gives the same chargin g time as c oss while v ds is rising from 0 to 80% v (br)dss. rev.1.0 april 2013 www.aosmd.com page 2 of 6
AOD3C60 typical electrical and thermal characteristics 40 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0 0.2 0.4 0.6 0.8 1 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c i d =30a 25c 125c 0 2 4 6 8 10 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 7v 10v 6.5v 6v 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 0 0.5 1 1.5 2 2.5 0 1.5 3 4.5 6 7.5 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =1a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) rev.1.0 april 2013 www.aosmd.com page 3 of 6
AOD3C60 typical electrical and thermal characteristics 0 3 6 9 12 15 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =480v i d =3a 1 10 100 1000 10000 0.1 1 10 100 1000 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0 20 40 60 80 100 0 25 50 75 100 125 150 t case (c) figure 11: power de-rating (note b) power dissipation (w) 0 0.5 1 1.5 2 2.5 3 3.5 0 25 50 75 100 125 150 t case (c) figure 12: current de-rating (note b) current rating i d (a) 0 1 2 3 4 5 0 100 200 300 400 500 600 v ds (volts) figure 9: coss stored energy eoss(uj) e oss rev.1.0 april 2013 www.aosmd.com page 4 of 6
AOD3C60 typical electrical and thermal characteristics 0 100 200 300 400 500 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to- ambient (note g) power (w) t j(max) =150c t a =25c 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note g) z q qq q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =55c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 13: single pulse power rating junction-to- case (note f) power (w) t j(max) =150c t c =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 15: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.4c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d t on t p d rev.1.0 april 2013 www.aosmd.com page 5 of 6
AOD3C60 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev.1.0 april 2013 www.aosmd.com page 6 of 6
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